DocumentCode :
1981598
Title :
Low Threshold Gaxln1-xP(X=0.4, 0.6)/(AIxGa1-x)0.5ln0.5P Strained Quantum Well Layers
Author :
Bour, D.P. ; Treat, D.W. ; Thornton, R.L. ; Paoli, T.L. ; Bringans, R.D. ; Krusor, B.S. ; GeeIs, R.S. ; Welch, D.F. ; Wang, T.Y.
Author_Institution :
Spectra Diode Laboratories, CA
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
221
Lastpage :
225
Keywords :
Artificial intelligence; Carrier confinement; Diodes; Electron optics; Laser modes; Optical materials; Optical pulses; Temperature; Testing; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665027
Filename :
665027
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1981598
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