Title :
Ultrafast coherent response of semiconductor quantum wells for multisubband excitation
Author :
Arlt, S. ; Siegner, U. ; Morier-Genoud, F. ; Keller, U.
Author_Institution :
Inst. for Quantum Electron., Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Summary form only given.We study the coherent emission from transitions corresponding to different pairs of electron (e) and heavy (hh) or light (Ih) hole subbands in a 500-A wide GaAs-Al/sub 0.3/Ga/sub 0.7/As quantum well by spectrally resolved transient four wave mixing (FWM). The low-temperature linear absorption spectrum shows exciton transitions between electron and hole subbands with the same quantum number as well as exciton transitions.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; light coherence; multiwave mixing; semiconductor quantum wells; time resolved spectroscopy; 500 A; GaAs-Al/sub 0.3/Ga/sub 0.7/As; GaAs-Al/sub 0.3/Ga/sub 0.7/As quantum well; coherent emission; electron pairs; exciton transitions; heavy hole subbands; hole subbands; light hole subbands; low-temperature linear absorption spectrum; multisubband excitation; quantum number; semiconductor quantum wells; spectrally resolved transient four wave mixing; ultrafast coherent response; Absorption; Delay effects; Excitons; Gallium arsenide; Interference; Optical pulses; Pulse modulation; Resonance; Scanning probe microscopy; Space vector pulse width modulation;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680471
