Title :
A complete deep-submicron C∞-continuous MOSFET model for circuit simulation
Author :
Iniguez, Benjamin ; Moreno, Eugenio Garcia
Author_Institution :
Univ. of the Balearic Islands, Palma de Mallorca, Spain
Abstract :
In this work we present an improved and complete deep-submicron MOSFET model for circuit simulation. This model includes expressions with an infinite order of continuity for channel current and all large and small-signal parameters, and therefore shows smooth transitions between the different operating regimes. The model is an improvement over our previous MOSFET model in order to include several effects that become important in submicron transistors. The agreement with the experimental measurements is good in a wide range of channel lengths
Keywords :
MOSFET; circuit CAD; circuit simulation; integrated circuit modelling; inversion layers; semiconductor device models; surface potential; C∞-continuous MOSFET model; CAD application; channel current; charge model; circuit simulation; complete deep-submicron MOSFET model; infinite order of continuity; inversion layer; large-signal parameters; series resistance effect; small-signal parameters; smooth transitions; submicron transistors; surface potential; Analytical models; Circuit simulation; Degradation; Harmonic distortion; MOSFET circuits; Scattering; Solid modeling; Threshold voltage; Transconductance; Velocity control;
Conference_Titel :
Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
Conference_Location :
Isla de Margarita
Print_ISBN :
0-7803-4434-0
DOI :
10.1109/ICCDCS.1998.705806
