Title :
A comparative analysis between nitride films on GaAs and epitaxial films of GaN by MOCVD system
Author :
Vilchis, H. ; Sánchez-R, Víctor M. ; Escobosa, A.
Author_Institution :
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City
Abstract :
In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; atomic force microscopy; epitaxial growth; gallium arsenide; gallium compounds; photoluminescence; wide band gap semiconductors; GaAs; GaN; MOCVD system; X-ray diffraction; atomic force microscopy; buffer nitrided films; epitaxial films; gallium nitride; metal-organic chemical vapour deposition; nitride thin films; photoluminescence; Atomic force microscopy; Atomic layer deposition; Chemical vapor deposition; Gallium arsenide; Gallium nitride; III-V semiconductor materials; MOCVD; Photoluminescence; X-ray diffraction; X-ray scattering; epitaxial GaN films; nitride GaN films;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-2498-6
Electronic_ISBN :
978-1-4244-2499-3
DOI :
10.1109/ICEEE.2008.4723423
