DocumentCode :
1981975
Title :
MOVPE Growth of Short-Period Superlattices of AIP-GaP and its Application for Light-Emitting Diodes
Author :
Morii, A. ; Okagawa, H. ; Hara, K. ; Yoshino, J. ; Kukimoto, H.
Author_Institution :
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
230
Lastpage :
231
Keywords :
Conducting materials; Epitaxial growth; Epitaxial layers; Laboratories; Light emitting diodes; Materials science and technology; Photoluminescence; Photonic band gap; Superlattices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665030
Filename :
665030
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1981975
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