Title :
In-situ Microwave Characterization of Medium-k HfO2 and High-k STO Dielectrics for MIM Capacitors Integrated in Back-End of Line of IC
Author :
Vo, T.T. ; Lacrevaz, Thierry ; Flechet, Bernard ; Farcy, A. ; Morand, Yves ; Blonkowski, S. ; Torres, Juana
Author_Institution :
IMEP-LAHC CNRS 5310, Univ. de Savoie, Le Bourget
Abstract :
The complex permittivity microwave characterization of medium-k materials as HfO2 and high-k materials as STO is presented. The characterization method, using coplanar or microstrip waveguides, allows a large band characterization, from 40 MHz to 40 GHz. It also allows investigating these materials with large scale thickness, from 10 nm up to 500 nm, in a configuration which can be very close to their final integration in an advanced damascene architecture of MIM capacitor. We show that the permittivity of such materials can be process and frequency-dependent.
Keywords :
MIM devices; capacitors; coplanar waveguides; hafnium compounds; microwave integrated circuits; HfO2; complex permittivity microwave characterization; coplanar waveguides; frequency 40 MHz to 40 GHz; high-k STO dielectrics; in-situ microwave characterization; integrated circuit; medium-k HfO2; metal insulator metal capacitors; microstrip waveguides; Coplanar waveguides; Dielectrics and electrical insulation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Permittivity; Radio frequency; Testing; Waveguide components; HfO2; MIM capacitor; PZT; STO; coplanar waveguide; high-k dielectric; loss tangent; medium-k dielectric; microstrip waveguide; microwave characterization; propagation exponent; scattering parameters;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555089
