DocumentCode
1982068
Title
A Novel Biasing Technique for Low Adjacent Channel Power in Microwave Power Amplifiers
Author
Lau, Kwok Wai ; Xue, Quan ; Chan, Chi Hou
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
1
Lastpage
4
Abstract
The proposed biasing technique is to change the DC quiescent point of the microwave power amplifiers self- adaptively with the input power. It not only manipulates the position of the third-order intermodulation distortion (IMD3) minimum dynamically, but also manages the DC bias power of the power amplifier adaptively. Therefore, the adjacent channel power can be reduced under the specified level, while the power consumption of the amplifier can be minimized. For the operation power ranging from 0.1 W to 0.5 W, a constant IMD3 of -25 dBm with above 25% of DC-to-RF conversion efficiency are achieved in a 1.95 GHz Class A power amplifier.
Keywords
intermodulation; microwave amplifiers; power amplifiers; DC-to-RF conversion; biasing technique; channel power; frequency 1.95 GHz; microwave power amplifiers; power 0.1 W to 0.5 W; third-order intermodulation distortion; Intermodulation distortion; Linearity; Microwave amplifiers; Microwave theory and techniques; Operational amplifiers; Power amplifiers; Power engineering and energy; Power generation; Quadrature amplitude modulation; Voltage; IMD3 minimum; dynamic biasing; power amplifiers; self-adaptive biasing; sweet spot;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location
Bangkok
Print_ISBN
978-1-4244-0748-4
Electronic_ISBN
978-1-4244-0749-1
Type
conf
DOI
10.1109/APMC.2007.4555093
Filename
4555093
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