A Cascode VCO based on Enhanced Colpitts Structure in InGaP/GaAs HBT Technology

Author

Na, Ho-San ; Shrestha, Bhanu ; Qian, Cheng ; Kim, Nam-Young

Author_Institution

Kwangwoon Univ., Seoul

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

In this paper, an integrated InGaP/GaAs MMIC VCO for an adaptive feedback interference cancellation system (AF- ICS) application is proposed. The new enhanced Colpitts architecture designed with low current consumption and low phase noise performance is implemented. The feedback capacitors are added between two transistors to increase the negative resistance and reduce the external noise interference. The phase noise of this VCO is -128.08 dBc/Hz at 100 KHz and - 138.46 dBc/Hz at 10 MHz offset frequency from the carrier frequency of 1.52 GHz when applying the control voltage of 1 volt. Three BC diodes are integrated in the same chip as a varactor to increase the VCO tuning range. The VCO is designed within the size of 0.76 x 0.86 mm².

Keywords

III-V semiconductors; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; indium compounds; voltage-controlled oscillators; HBT technology; InGaP-GaAs; MMIC oscillators; adaptive feedback interference cancellation system; cascode VCO; enhanced Colpitts structure; feedback capacitors; Capacitors; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Interference cancellation; MMICs; Negative feedback; Noise reduction; Phase noise; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); InGaP/GaAs; colpitts; monolithic microwave integrated circuit (MMIC) oscillators; phase noise; voltage controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555095

Filename

4555095