Title :
A 4W UHF Si-LDMOS class AB PA for RFID applications
Author :
Saavedra-Gómez, H.J. ; Valle, J. L Del ; Loo-Yau, J.R. ; García-Osorio, A.
Author_Institution :
Centro de Investig. y de Estudios Av. del Inst. Politec. Nac., Unidad Guadalajara, Guadalajara
Abstract :
Using measurement techniques and appropriate models for III-V semiconductor compound transistors we have implemented a large signal model for a commercial LDMOS transistor. Based on this model a 4 Watt UHF class AB power amplifier was simulated and evaluated. The power amplifier was characterized using an aluminum test bench and microstrips. Experimental results shown an output power of 36.3 dBm for an input power of 23 dBm and a PAE efficiency of 57%. These results show that the proposed model is appropriate for RFID applications in the UHF band.
Keywords :
III-V semiconductors; UHF power amplifiers; elemental semiconductors; power MOSFET; semiconductor device models; silicon; III-V semiconductor compound; LDMOS transistor; RFID; UHF class AB power amplifier; aluminum test bench; large signal model; microstrips; power 4 W; Associate members; Automatic control; Costs; III-V semiconductor materials; Linearity; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; LDMOS; Nonlinear model; RF Amplifiers; Small signal model;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-2498-6
Electronic_ISBN :
978-1-4244-2499-3
DOI :
10.1109/ICEEE.2008.4723437
