DocumentCode :
1982431
Title :
Analysis of a kind of diode over-current oscillation mechanism
Author :
Yu, Chengda ; Deng, Qibin ; Han, Wei ; Li, Ping ; Feng, Deren
Author_Institution :
Beijing Inst. of Special Electromech. Technol., Beijing, China
fYear :
2011
fDate :
16-18 Sept. 2011
Firstpage :
2889
Lastpage :
2893
Abstract :
Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process.
Keywords :
relaxation oscillators; semiconductor device models; semiconductor diodes; DC circuit; current periodic change; diode over-current oscillation mechanism; oscillation frequency; relaxation oscillation; semiconductor diode; silicon epitaxial planar diode; Cathodes; Electric potential; Mathematical model; Metals; Oscillators; Semiconductor diodes; Switches; Drift; Particle aggregation; Relaxation oscillation; Transit Time; Virtual Cathode; Voltage-controlled Switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Control Engineering (ICECE), 2011 International Conference on
Conference_Location :
Yichang
Print_ISBN :
978-1-4244-8162-0
Type :
conf
DOI :
10.1109/ICECENG.2011.6057483
Filename :
6057483
Link To Document :
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