DocumentCode
19825
Title
Low Overhead Software Wear Leveling for Hybrid PCM + DRAM Main Memory on Embedded Systems
Author
Jingtong Hu ; Mimi Xie ; Chen Pan ; Xue, Chun Jason ; Qingfeng Zhuge ; Sha, Edwin H.-M
Author_Institution
Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA
Volume
23
Issue
4
fYear
2015
fDate
Apr-15
Firstpage
654
Lastpage
663
Abstract
Phase change memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics, such as low-cost, shock-resistivity, nonvolatility, high density, and low leakage power. However, relatively low endurance has limited its practical applications. In this paper, in addition to existing hardware level optimizations, we propose software enabled wear-leveling techniques to further extend PCMs lifetime when it is adopted in embedded systems. Most existing software optimization techniques focus on reducing the total number of writes to PCM, but none of them consider wear leveling, in which the writes are distributed more evenly over the PCM. An integer linear programming formulation and a polynomial-time algorithm, the software wear-leveling algorithm, are proposed in this paper to achieve wear leveling without hardware overhead. According to the experimental results, the proposed techniques can reduce the number of writes on the most-written addresses by more than 80% when compared with a greedy algorithm, and by more than 60% when compared with the existing optimal data allocation algorithm with under 6% memory access overhead.
Keywords
DRAM chips; computational complexity; embedded systems; integer programming; linear programming; phase change memories; PCM lifetime extension; embedded systems; high density; hybrid PCM + DRAM main memory; integer linear programming; low leakage power; low overhead software wear leveling technique; low-cost; nonvolatility; phase change memory; polynomial-time algorithm; shock-resistivity; software optimization techniques; total write number reduction; Embedded systems; Hardware; Nonvolatile memory; Phase change materials; Random access memory; Resource management; DRAM; energy; main memory; nonvolatile memories (NVMs); phase change memory (PCM); wear leveling; write reduction; write reduction.;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2014.2321571
Filename
6820777
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