DocumentCode :
19825
Title :
Low Overhead Software Wear Leveling for Hybrid PCM + DRAM Main Memory on Embedded Systems
Author :
Jingtong Hu ; Mimi Xie ; Chen Pan ; Xue, Chun Jason ; Qingfeng Zhuge ; Sha, Edwin H.-M
Author_Institution :
Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA
Volume :
23
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
654
Lastpage :
663
Abstract :
Phase change memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics, such as low-cost, shock-resistivity, nonvolatility, high density, and low leakage power. However, relatively low endurance has limited its practical applications. In this paper, in addition to existing hardware level optimizations, we propose software enabled wear-leveling techniques to further extend PCMs lifetime when it is adopted in embedded systems. Most existing software optimization techniques focus on reducing the total number of writes to PCM, but none of them consider wear leveling, in which the writes are distributed more evenly over the PCM. An integer linear programming formulation and a polynomial-time algorithm, the software wear-leveling algorithm, are proposed in this paper to achieve wear leveling without hardware overhead. According to the experimental results, the proposed techniques can reduce the number of writes on the most-written addresses by more than 80% when compared with a greedy algorithm, and by more than 60% when compared with the existing optimal data allocation algorithm with under 6% memory access overhead.
Keywords :
DRAM chips; computational complexity; embedded systems; integer programming; linear programming; phase change memories; PCM lifetime extension; embedded systems; high density; hybrid PCM + DRAM main memory; integer linear programming; low leakage power; low overhead software wear leveling technique; low-cost; nonvolatility; phase change memory; polynomial-time algorithm; shock-resistivity; software optimization techniques; total write number reduction; Embedded systems; Hardware; Nonvolatile memory; Phase change materials; Random access memory; Resource management; DRAM; energy; main memory; nonvolatile memories (NVMs); phase change memory (PCM); wear leveling; write reduction; write reduction.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2014.2321571
Filename :
6820777
Link To Document :
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