DocumentCode :
1982726
Title :
Arsenic Precursor As[N(CH3)2]3 and Role of Its Catalytic Precracking in MOMBE of GaAs
Author :
Koui, Tomoaki ; Suemune, Ikuo ; Fujii, Kazuyuki ; Yamanishi, Masamichi
Author_Institution :
Hiroshima University, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
242
Lastpage :
243
Keywords :
Conductive films; Conductivity; Gallium arsenide; Molecular beam epitaxial growth; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665036
Filename :
665036
Link To Document :
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