DocumentCode
1982762
Title
A 9 - 10 GHz 5 Watt GaAs FET Amplifier
Author
Fukuden, Nobutoshi ; Ishiyama, Naoyuki ; Arai, Youichi
Author_Institution
Microwave Semiconductor Engneering Dept. Fujitsu Ltd., Kawasaki, Japan
fYear
1981
fDate
7-11 Sept. 1981
Firstpage
765
Lastpage
769
Abstract
A high power GaAs FET amplifier with an output power of 5 watts in the X-band has been developed. Gain is more than 40 dB and the intercept point is plus 46.8 dBm. Four power GaAs FETs with a gate width of 7,200 microns are used in the final stage amplifier. The combining loss of the final stage amplifier is 1.3 dB under operating conditions.
Keywords
Electromagnetic heating; FETs; Frequency; Gain; Gallium arsenide; High power amplifiers; Microwave circuits; Power amplifiers; Power generation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1981. 11th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1981.333015
Filename
4131710
Link To Document