Title :
A 9 - 10 GHz 5 Watt GaAs FET Amplifier
Author :
Fukuden, Nobutoshi ; Ishiyama, Naoyuki ; Arai, Youichi
Author_Institution :
Microwave Semiconductor Engneering Dept. Fujitsu Ltd., Kawasaki, Japan
Abstract :
A high power GaAs FET amplifier with an output power of 5 watts in the X-band has been developed. Gain is more than 40 dB and the intercept point is plus 46.8 dBm. Four power GaAs FETs with a gate width of 7,200 microns are used in the final stage amplifier. The combining loss of the final stage amplifier is 1.3 dB under operating conditions.
Keywords :
Electromagnetic heating; FETs; Frequency; Gain; Gallium arsenide; High power amplifiers; Microwave circuits; Power amplifiers; Power generation; Temperature;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.333015
