DocumentCode
1982827
Title
The Study of the Third-Order Intermodulation Distortion of a Dual-Gate FET Amplifier
Author
Chen, Philip T. ; Hsieh, Chi C.
fYear
1981
fDate
7-11 Sept. 1981
Firstpage
781
Lastpage
786
Abstract
This paper studies the third-order intermodulation (IMD) products of dual-gate GaAs FET amplifier as a function of device bias and input power level. A l2GHz variable gain amplifier employing a dual-gate FET has been designed using a novel synchronized biasing technique to achieve better than 40 dBc IMD over a 30 dB gain control range.
Keywords
Capacitance; Digital communication; FETs; Gain control; Gallium arsenide; Intermodulation distortion; Linearity; Power amplifiers; Receivers; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1981. 11th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1981.333018
Filename
4131713
Link To Document