Title :
The Study of the Third-Order Intermodulation Distortion of a Dual-Gate FET Amplifier
Author :
Chen, Philip T. ; Hsieh, Chi C.
Abstract :
This paper studies the third-order intermodulation (IMD) products of dual-gate GaAs FET amplifier as a function of device bias and input power level. A l2GHz variable gain amplifier employing a dual-gate FET has been designed using a novel synchronized biasing technique to achieve better than 40 dBc IMD over a 30 dB gain control range.
Keywords :
Capacitance; Digital communication; FETs; Gain control; Gallium arsenide; Intermodulation distortion; Linearity; Power amplifiers; Receivers; Transconductance;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.333018
