DocumentCode
1982855
Title
A Highly Integrated Quasi-millimeter Wave Transmitter MMIC Using 3D-MMIC Technology
Author
Yamaguchi, Yo ; Kaho, Takana ; Uehara, Kazuhiro ; Nagamine, Shinji ; Toriyama, Yasuhiro ; Shirosaki, Toshifumi ; Taniguchi, Toru
Author_Institution
NTT Network Innovation Labs., NTT Corp., Yokosuka
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
1
Lastpage
4
Abstract
A highly integrated quasi-millimeter-wave transmitter MMIC that integrates 26 circuits in a 3 mm times 3 mm area using three-dimensional MMIC (3D-MMIC) technology is presented. The power dissipation of the MMIC is only 0.54 W. It achieved a high P1 dB of 6 dBm and gain of 19 dB at 26 GHz. Furthermore, it integrated step attenuators with a new built-in inverter using an N-channel depression FET for transmit power control.
Keywords
MMIC; field effect transistors; radio transmitters; 3D MMIC technology; N-channel depression FET; built-in inverter; frequency 26 GHz; gain 19 dB; highly integrated quasimillimeter wave transmitter; power 0.54 W; size 3 mm; transmit power control; Attenuators; Filters; Frequency; Impedance; Integrated circuit technology; Inverters; MMICs; Optical transmitters; Parasitic capacitance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location
Bangkok
Print_ISBN
978-1-4244-0748-4
Electronic_ISBN
978-1-4244-0749-1
Type
conf
DOI
10.1109/APMC.2007.4555130
Filename
4555130
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