Title :
A High Power, High Efficiency Amplifier using GaN HEMT
Author :
Kim, Bumjin ; Derickson, D. ; Sun, C.
Author_Institution :
Electr. Eng. Dept., California Polytech. State Univ., San Luis, CA
Abstract :
A class B and a class F power amplifier are described using a GaN HEMT device. They both were designed to operate at a frequency of 1.7 GHz with the same bias conditions. The performances of each amplifier were successfully simulated and compared. A class B amplifier was physically implemented and achieved a high power-added-efficiency of 69.2%, 39.9 dBm output power and associated gain of 14.9 dB. The experimental results were in close agreement to the simulation results.
Keywords :
gallium compounds; high electron mobility transistors; power amplifiers; GaN HEMT device; frequency 1.7 GHz; gain 14.9 dB; gallium nitride; power amplifier; power-added-efficiency; Gallium nitride; HEMTs; High power amplifiers; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Voltage; GaN HEMT; High Efficiency; High Power; Power Added Efficiency; Power Amplifier;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555132
