CMOS image sensor 3T Nwell photodiode pixel SPICE model

Author

Reiner, T. ; Mishori, B. ; Leitner, T. ; Horovitz, A. ; Vainbaum, Y. ; Hakim, M. ; Lahav, A. ; Shapira, S. ; Fenigstein, A.

Author_Institution

Tower Semicond. Ltd, Migdal HaEmek, Israel

fYear

2004

fDate

6-7 Sept. 2004

Firstpage

161

Lastpage

164

Abstract

CMOS image sensor pixel design requires accurate SPICE modeling to determine pixel performance. In this work, a standard Nwell/Psub photodiode with a 3 transistor pixel has been modeled using Cadence SPECTRE SPICE simulator fabricated using a conventional 0.18 μm CMOS process technology. Pixel parameters such as voltage swing, clock feedthrough and pixel capacitance have been modeled using silicon based measurements of individual components. These components include reset source region, Nwell photodiode and source follower gate capacitances. In addition, nonlinear effects of the photodiode and source follower are included in the model. The accuracy of the model agrees well with measured pixel transient response.

Keywords

CMOS image sensors; SPICE; capacitance; photodiodes; silicon; transient response; 3 transistor pixel; CMOS image sensor; CMOS process; Cadence SPECTRE; Nwell/Psub photodiode; SPICE modeling; clock feedthrough; nonlinear effects; pixel capacitance; pixel performance; pixel transient response; reset source region; silicon based measurements; source follower gate capacitances; voltage swing; CMOS image sensors; CMOS process; CMOS technology; Capacitance; Clocks; Photodiodes; Pixel; SPICE; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 2004. Proceedings. 2004 23rd IEEE Convention of

Print_ISBN

0-7803-8427-X

Type

conf

DOI

10.1109/EEEI.2004.1361114

Filename

1361114