A comparative analysis of synthesizing gallium nitride films: On gallium arsenide and sapphire substrates

Author

Guarneros, C. ; Vilchis, H. ; Sánchez, V.M. ; Escobosa, A.

Author_Institution

Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City

fYear

2008

fDate

12-14 Nov. 2008

Firstpage

478

Lastpage

480

Abstract

The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al₂O₃) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.

Keywords

III-V semiconductors; MOCVD; gallium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; Al₂O₃; GaAs; GaN; epitaxial films; gallium arsenide substrates; metal organic vapor phase epitaxy; photoluminescence spectra; room temperature; sapphire substrates; temperature 293 K to 298 K; Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Hydrogen; III-V semiconductor materials; Inductors; Substrates; Temperature; GaAs; GaN films; MOVPE; sapphire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on

Conference_Location

Mexico City

Print_ISBN

978-1-4244-2498-6

Electronic_ISBN

978-1-4244-2499-3

Type

conf

DOI

10.1109/ICEEE.2008.4723459

Filename

4723459