DocumentCode :
1982993
Title :
A comparative analysis of synthesizing gallium nitride films: On gallium arsenide and sapphire substrates
Author :
Guarneros, C. ; Vilchis, H. ; Sánchez, V.M. ; Escobosa, A.
Author_Institution :
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City
fYear :
2008
fDate :
12-14 Nov. 2008
Firstpage :
478
Lastpage :
480
Abstract :
The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al2O3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; Al2O3; GaAs; GaN; epitaxial films; gallium arsenide substrates; metal organic vapor phase epitaxy; photoluminescence spectra; room temperature; sapphire substrates; temperature 293 K to 298 K; Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Hydrogen; III-V semiconductor materials; Inductors; Substrates; Temperature; GaAs; GaN films; MOVPE; sapphire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-2498-6
Electronic_ISBN :
978-1-4244-2499-3
Type :
conf
DOI :
10.1109/ICEEE.2008.4723459
Filename :
4723459
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1982993
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