A simple model for ACTFEL display devices

Author

Aguilera, A. ; Singh, V.P.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., El Paso, TX, USA

fYear

1998

fDate

2-4 Mar 1998

Firstpage

83

Lastpage

87

Abstract

An analytical model for a.c. thin film electroluminescent (ACTFEL) display devices is presented. The equations used to describe the device behaviour are given, as well as the algorithm used for numerical simulations. Results of numerical simulations are presented and their qualitative characteristics discussed and compared with experimental results. The model is applied toward a better understanding of the trailing edge luminance peak and oscillations in luminance waveforms observed in SrS:Ce ACTFEL devices

Keywords

brightness; cerium; electroluminescent displays; impact ionisation; phosphors; semiconductor device models; strontium compounds; ACTFEL display devices; SrS:Ce; algorithm; analytical model; electron ejection; electron traps; impact ionization; interface states; numerical simulation; oscillations in luminance waveforms; phosphor layer; space charge; trailing edge luminance peak; Computer displays; Electrons; Flat panel displays; Insulation; Kinetic energy; Numerical simulation; Phosphors; Semiconductor materials; Thin film devices; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705811

Filename

705811