DocumentCode
1983177
Title
IMPATT and TRAPATT Oscillators Modelling
Author
Profiresou, M D ; Covaci, S
Author_Institution
Polyt. Inst. of Bucharest, Dept. of Electronics, 1, Polizu Str., Bucharest, Romania
fYear
1981
fDate
7-11 Sept. 1981
Abstract
The paper describes a set of efficient programs for the modelling and evaluation of avalanche diode oscillators. The programs have been tested thoroughly and results compared with those of other simulations as well as with practical measurements. The influence of minority saturation currents on TRAPATT oscillators is analysed. Also the effect of minority carriers on the power saturation of IMPATT oscillators is simulated. The implementation of avalanche noise allows for the evaluation of noise performance of IMPATTs and TRAPATTs.
Keywords
Circuit simulation; Equations; Frequency; Oscillators; Semiconductor device noise; Semiconductor diodes; Semiconductor process modeling; Steady-state; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1981. 11th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1981.332915
Filename
4131733
Link To Document