Title :
IMPATT and TRAPATT Oscillators Modelling
Author :
Profiresou, M D ; Covaci, S
Author_Institution :
Polyt. Inst. of Bucharest, Dept. of Electronics, 1, Polizu Str., Bucharest, Romania
Abstract :
The paper describes a set of efficient programs for the modelling and evaluation of avalanche diode oscillators. The programs have been tested thoroughly and results compared with those of other simulations as well as with practical measurements. The influence of minority saturation currents on TRAPATT oscillators is analysed. Also the effect of minority carriers on the power saturation of IMPATT oscillators is simulated. The implementation of avalanche noise allows for the evaluation of noise performance of IMPATTs and TRAPATTs.
Keywords :
Circuit simulation; Equations; Frequency; Oscillators; Semiconductor device noise; Semiconductor diodes; Semiconductor process modeling; Steady-state; Testing; Voltage;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.332915
