DocumentCode :
1983461
Title :
Conductive mechanism and its mathematical model of thick-film strain resistors
Author :
Ma, Yiwu ; Chen, Jianqun ; Ding, Peng ; Li, Minqiang
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Anhui, China
fYear :
2005
fDate :
27 June-3 July 2005
Abstract :
Some thick-film resistors base on Bi2Ru2O7 were evaluated. The resistors are made by screen-printing thick film paste on Al2O3 substrates. After printing and drying, the thick-film pastes are fired in a belt furnace. We discuss the conduction mechanism and a strain sensitive mathematical model of thick-film resistors through calculating and taking the measurements of the gauge factor (GF). We also interpreted the phenomenon through the strain sensitive model, and explained the strain sensitive phenomenon, such as the GF mounts up with the barrier height´s augmention.
Keywords :
bismuth compounds; drying; pressure sensors; ruthenium compounds; substrates; thick film resistors; Al2O3; Bi2Ru2O7; belt furnace; conductive mechanism; gauge factor; screen-printing; strain sensitive mathematical model; substrate; thick film paste; thick-film strain resistor; Belts; Bismuth; Capacitive sensors; Furnaces; Mathematical model; Printing; Resistors; Strain measurement; Substrates; Thick films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Acquisition, 2005 IEEE International Conference on
Print_ISBN :
0-7803-9303-1
Type :
conf
DOI :
10.1109/ICIA.2005.1635058
Filename :
1635058
Link To Document :
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