Title :
Design of a silicon magnetodiodes array with self-compensation for temperature drift
Author :
Zhang, Dongfeng ; Kong, Deyi ; Tao, Yongchun ; Shan, Jianhua
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Anhui, China
fDate :
27 June-3 July 2005
Abstract :
The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.
Keywords :
compensation; integrated circuit design; magnetic sensors; microsensors; nanotechnology; semiconductor diodes; silicon-on-insulator; IC fabrication process; MEMS technique; SOI; high-resistivity silicon on insulator; micro-electro-mechanical system technique; perpendicular-plane magnetic field sensing; self-compensation; sensor cells; silicon magnetodiodes array design; silicon magnetodiodes array fabrication; temperature drift; Magnetic fields; Magnetic semiconductors; Magnetic sensors; Radiative recombination; Rough surfaces; Sensor arrays; Silicon on insulator technology; Surface resistance; Surface roughness; Temperature sensors;
Conference_Titel :
Information Acquisition, 2005 IEEE International Conference on
Print_ISBN :
0-7803-9303-1
DOI :
10.1109/ICIA.2005.1635070
