DocumentCode :
1983741
Title :
20GHz GaAs FET Oscillator using a Dielectric Resonator
Author :
Mizumura, Motoo ; Wada, Kenzo ; Aihara, Shigenobu ; Haga, Isao
Author_Institution :
Microwave and Satellite Communications Division, Nippon Electric Co., Ltd., 4035 Ikebe-cho, Midori-Ku, Yokohama, 226 Japan
fYear :
1982
fDate :
13-17 Sept. 1982
Firstpage :
175
Lastpage :
180
Abstract :
A new type of highly stabilized 20 GHz GaAs FET oscillator using a dielectric resonator has been developed. Not using any frequency multiplying device, it features compactness, simple configuration and high reliability. A frequency stability of within ±15ppm (0°C~+50°C) was obtained at 20 GHz.
Keywords :
Circuit stability; Dielectrics; Frequency conversion; Gallium arsenide; Mass production; Microstrip; Microwave FETs; Microwave circuits; Microwave oscillators; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1982. 12th European
Conference_Location :
Helsinki, Finland
Type :
conf
DOI :
10.1109/EUMA.1982.333157
Filename :
4131761
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1983741
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