Title :
Drastic enhancement of interband optical transition probability with electron pairing in semiconductors
Author :
Suemune, I. ; Sasakura, H. ; Hermannstädter, C. ; Huh, J. -H ; Asano, Y. ; Tanaka, K. ; Akazaki, T. ; Kumano, H.
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
Interband optical transition probability (usually given as the B coefficient) is normally fixed for a given semiconductor structure. Here we will show the B coefficient can be drastically enhanced effectively with electron injection in paired states.
Keywords :
Cooper pairs; electron pairs; light emitting diodes; probability; electron injection; electron pairing; interband optical transition probability; light emitting diodes; paired states; semiconductor structure; Charge carrier processes; Indium gallium arsenide; Light emitting diodes; Niobium; Radiative recombination;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6193687
