• DocumentCode
    1984422
  • Title

    Drastic enhancement of interband optical transition probability with electron pairing in semiconductors

  • Author

    Suemune, I. ; Sasakura, H. ; Hermannstädter, C. ; Huh, J. -H ; Asano, Y. ; Tanaka, K. ; Akazaki, T. ; Kumano, H.

  • Author_Institution
    Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
  • fYear
    2011
  • fDate
    Aug. 28 2011-Sept. 1 2011
  • Firstpage
    1119
  • Lastpage
    1120
  • Abstract
    Interband optical transition probability (usually given as the B coefficient) is normally fixed for a given semiconductor structure. Here we will show the B coefficient can be drastically enhanced effectively with electron injection in paired states.
  • Keywords
    Cooper pairs; electron pairs; light emitting diodes; probability; electron injection; electron pairing; interband optical transition probability; light emitting diodes; paired states; semiconductor structure; Charge carrier processes; Indium gallium arsenide; Light emitting diodes; Niobium; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4577-1939-4
  • Type

    conf

  • DOI
    10.1109/IQEC-CLEO.2011.6193687
  • Filename
    6193687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1984422