DocumentCode :
1984434
Title :
Effect of MOVPE Growth Parameters on the Photoluminescence Linewidth of ZnSxSe1-x(O
Author :
Heuken, M. ; Geyzers, K.P. ; Söllner, J. ; Schneider, A. ; Guimarães, F. E G ; Heime, K.
Author_Institution :
Institut fur Halbleitertechnik, Aachen
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
252
Lastpage :
253
Keywords :
Epitaxial growth; Epitaxial layers; Excitons; Impurities; Mirrors; Optical scattering; Photoluminescence; Solids; Temperature; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665043
Filename :
665043
Link To Document :
