Effect of MOVPE Growth Parameters on the Photoluminescence Linewidth of ZnS_xSe_1-x(O

Author

Heuken, M. ; Geyzers, K.P. ; Söllner, J. ; Schneider, A. ; Guimarães, F. E G ; Heime, K.

Author_Institution

Institut fur Halbleitertechnik, Aachen

fYear

1992

fDate

8-11 Jun 1992

Firstpage

252

Lastpage

253

Keywords

Epitaxial growth; Epitaxial layers; Excitons; Impurities; Mirrors; Optical scattering; Photoluminescence; Solids; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

DOI

10.1109/MOVPE.1992.665043

Filename

665043

Link To Document