Title :
RF MEMS and MMIC based reconfigurable matching networks for adaptive multi-band RF front-ends
Author :
Malmqvist, R. ; Samuelsson, C. ; Rantakari, P. ; Vähä-Heikkilä, T. ; Smith, D. ; Varis, J. ; Baggen, R.
Author_Institution :
FOI Swedish Defence Res. Agency, Linkoping, Sweden
Abstract :
In this paper, we present GaAs MMIC based reconfigurable RF MEMS impedance matching networks for highly integrated (potentially single-chip) frequency-agile LNAs and adaptive multi-band front-ends. Such GaAs MMIC based RF MEMS LNA matching networks have been realized with a frequency tuning range of 40% (10-16 GHz and 15-23 GHz, respectively) and 1-3 dB of in-band losses. Simulated tunable LNA results based on measured data of GaAs MMIC MEMS matching circuits (and simulated data of MEMS matching networks made on quartz) show the potential of achieving a high gain and low in-band noise figure over such wide tuning ranges.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; impedance matching; low noise amplifiers; micromechanical devices; radiofrequency amplifiers; GaAs MMIC; RF MEMS LNA matching network; adaptive multiband RF front-ends; frequency 10 GHz to 16 GHz; frequency 15 GHz to 23 GHz; integrated frequency-agile LNA; loss 1 dB to 3 dB; reconfigurable RF MEMS impedance matching network; Adaptive systems; Circuit optimization; Circuit simulation; Gallium arsenide; Impedance matching; MMICs; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Tuning; Low noise amplifiers; matching networks; radio frequency microelectromechanical system (RF MEMS);
Conference_Titel :
RF Front-ends for Software Defined and Cognitive Radio Solutions (IMWS), 2010 IEEE International Microwave Workshop Series on
Conference_Location :
Aveiro
Print_ISBN :
978-1-4244-5751-9
DOI :
10.1109/IMWS.2010.5440973
