• DocumentCode
    1984475
  • Title

    An output-capacitor-free adaptively biased low-dropout regulator with sub-threshold undershoot-reduction for SoC

  • Author

    Zhan, Chenchang ; Ki, Wing-Hung

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2011
  • fDate
    15-18 May 2011
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    This paper presents an output-capacitor-free adaptively biased low-dropout regulator with sub-threshold undershoot-reduction (ABSTUR LDR) for SoC power management applications. Techniques of Q-reduction compensation and adaptive biasing (AB) are employed to achieve low-voltage high-recision regulation with enhanced loop bandwidth while maintaining low quiescent current and high current efficiency. A symmetrically matched current-voltage mirror is used to implement the AB scheme, enabling an accurate load current sensing even with the pass transistor working in the linear region that is beneficial for chip-area saving. The dedicated STUR circuit, which is low-voltage compatible and consumes very low current in the steady state, is inserted to momentarily increase the gate discharging current of the pass transistor when the LDR output has a large undershoot due to a large step up of the load current. Features of the proposed ABSTUR LDR are experimentally verified by a prototype fabricated in a standard 0.35-μm CMOS process.
  • Keywords
    CMOS integrated circuits; current mirrors; discharges (electric); low-power electronics; system-on-chip; voltage regulators; CMOS process; Q-reduction compensation; STUR circuit; SoC power management; adaptive biasing; chip-area saving; current-voltage mirror; gate discharging current; load current sensing; low quiescent current; low-voltage high-recision regulation; output-capacitor-free low-dropout regulator; pass transistor; size 0.35 mum; sub-threshold undershoot-reduction; Bandwidth; Current measurement; Logic gates; Regulators; System-on-a-chip; Transient analysis; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4244-9473-6
  • Electronic_ISBN
    0271-4302
  • Type

    conf

  • DOI
    10.1109/ISCAS.2011.5937497
  • Filename
    5937497