• DocumentCode
    1984608
  • Title

    A High Power GaAs FET Frequency Multiplier for Microwave Radio Application at C-Band

  • Author

    Chow, Tao ; Chen, Philip T. ; Hsieh, Chi C.

  • Author_Institution
    Harris-Farinon Division, 1691 Bayport Avenue, San Carlos, CA, USA 94070
  • fYear
    1982
  • fDate
    13-17 Sept. 1982
  • Firstpage
    441
  • Lastpage
    445
  • Abstract
    This paper describes a C-band GaAs FET frequency doubler with 2 dB of multiplication gain at an output level of 1 Watt. The result clearly demonstrated the advantage of using a power GaAs FET over the conventional step recovery diode. The circuit design and dependences of the output level of a power GaAs FET doubler will be given. Major microwave application of such circuit will also be presented.
  • Keywords
    Circuits; Diodes; Frequency; Gain; Gallium arsenide; Impedance; Microwave FETs; Power generation; Testing; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1982. 12th European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1982.333101
  • Filename
    4131806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1984608