A High Power GaAs FET Frequency Multiplier for Microwave Radio Application at C-Band

This paper describes a C-band GaAs FET frequency doubler with 2 dB of multiplication gain at an output level of 1 Watt. The result clearly demonstrated the advantage of using a power GaAs FET over the conventional step recovery diode. The circuit design and dependences of the output level of a power GaAs FET doubler will be given. Major microwave application of such circuit will also be presented.