Efficient voltage conversion for SRAM low standby power modes

Author

Clark, Lawrence T. ; Chen, Tai-Hua ; Chaudhary, Vikas

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2011

fDate

15-18 May 2011

Firstpage

73

Lastpage

76

Abstract

A monolithic switched-capacitor voltage converter to drive the virtual Vss for low standby power "drowsy" modes is presented. The voltage converter has been fabricated on a 0.13-μm digital CMOS process. Test chip measurements demonstrate current drive capability from 10 μA to 100 μA with power efficiency over 86%. The test chip measurements also demonstrate that the chip level power efficiency of the converter is at least 2x better than the conventional linear regulation approach, which is commonly used in high volume commercially available designs.

Keywords

CMOS memory circuits; SRAM chips; power convertors; SRAM; current 10 muA to 100 muA; digital CMOS process; efficient voltage conversion; low standby power drowsy modes; low standby power mode; monolithic switched capacitor voltage converter; size 0.13 mum; test chip measurements; Capacitors; Clocks; Current measurement; Random access memory; Switches; Transistors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Conference_Location

Rio de Janeiro

ISSN

0271-4302

Print_ISBN

978-1-4244-9473-6

Electronic_ISBN

0271-4302

Type

conf

DOI

10.1109/ISCAS.2011.5937504

Filename

5937504