DocumentCode :
1984670
Title :
Efficient voltage conversion for SRAM low standby power modes
Author :
Clark, Lawrence T. ; Chen, Tai-Hua ; Chaudhary, Vikas
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
73
Lastpage :
76
Abstract :
A monolithic switched-capacitor voltage converter to drive the virtual Vss for low standby power "drowsy" modes is presented. The voltage converter has been fabricated on a 0.13-μm digital CMOS process. Test chip measurements demonstrate current drive capability from 10 μA to 100 μA with power efficiency over 86%. The test chip measurements also demonstrate that the chip level power efficiency of the converter is at least 2x better than the conventional linear regulation approach, which is commonly used in high volume commercially available designs.
Keywords :
CMOS memory circuits; SRAM chips; power convertors; SRAM; current 10 muA to 100 muA; digital CMOS process; efficient voltage conversion; low standby power drowsy modes; low standby power mode; monolithic switched capacitor voltage converter; size 0.13 mum; test chip measurements; Capacitors; Clocks; Current measurement; Random access memory; Switches; Transistors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5937504
Filename :
5937504
Link To Document :
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