DocumentCode :
1984675
Title :
Performance Analysis of Dual-Gate MESFET Mixers
Author :
El-Sayed, Osman Lotfy
Author_Institution :
Department of Electronics and Telecommunications Faculty of Engineering, Cairo University Giza, Cairo-Egypt.
fYear :
1982
fDate :
13-17 Sept. 1982
Firstpage :
457
Lastpage :
462
Abstract :
Starting from the "cascode" model of the dual gate microwave MESFET an analysis of its performance as a mixer is carried. In this approach, the modulation of the transconductance of the second FET as well as the "drain" resistance of the first FET by the local oscillator voltage are taken into consideration. The obtained relation for the conversion gain permits the optimization of dual-gate MESFET mixers performance.
Keywords :
FETs; Frequency; Impedance; Local oscillators; MESFETs; Performance analysis; Positron emission tomography; Signal analysis; Transconductance; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1982. 12th European
Conference_Location :
Helsinki, Finland
Type :
conf
DOI :
10.1109/EUMA.1982.333104
Filename :
4131809
Link To Document :
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