A GaN class-F PA with 600 MHz bandwidth and 62.5% of PAE suitable for WiMAX frequencies

Author

García-Osorio, A. ; Loo-Yau, J.R. ; Reynoso-Hernández, J.A.

Author_Institution

Centro de Investig. y Estudios Av. del I.P.N., Guadalajara, Mexico

fYear

2010

fDate

22-23 Feb. 2010

Firstpage

1

Lastpage

4

Abstract

This paper introduces a method for improving the bandwidth of GaN class-F PAs. The key idea behind this broadband class-F PA lies in the bandpass filter (BPF) used at the input matching network of a conventional class-F PA. Harmonic impedance optimization at the input of the FET is performed in order to design the BPF. Theoretical and experimental results verified the proposed method.

Keywords

WiMax; band-pass filters; field effect transistors; gallium compounds; power amplifiers; wideband amplifiers; FET; GaN; GaN class-F PA; PAE; WiMAX frequencies; bandpass filter; broadband class-F PA; frequency 600 MHz; harmonic impedance optimization; input matching network; Band pass filters; Bandwidth; Design methodology; Electronic mail; FETs; Frequency; Gallium nitride; Impedance matching; Power harmonic filters; WiMAX; Bandwidth; GaN transistor; PAE; class-F; harmonic impedances; matching network;

fLanguage

English

Publisher

ieee

Conference_Titel

RF Front-ends for Software Defined and Cognitive Radio Solutions (IMWS), 2010 IEEE International Microwave Workshop Series on

Conference_Location

Aveiro

Print_ISBN

978-1-4244-5751-9

Type

conf

DOI

10.1109/IMWS.2010.5440995

Filename

5440995