Single layer nitride capacitor dielectric film and high concentration doping technology for 1 Gb/4 Gb trench-type DRAMs

Author

Saida, S. ; Sato, T. ; Mizushima, I. ; Ozawa, Y. ; Tsunashima, Y.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

265

Lastpage

268

Abstract

We propose a novel CVD-SiN deposition process for Single layer Nitride film using SiCl/sub 4/ as the source material to reduce the Si-H bond in the SiN film and a high concentration doping process from vapor phase into a deep trench side-wall. Combining both technologies, an equivalent film thickness for 1 G/4 Gbit DRAM is successfully reduced below 4.0 nm without especial high dielectric constant materials.

Keywords

DRAM chips; chemical vapour deposition; dielectric thin films; semiconductor doping; silicon compounds; thin film capacitors; 1 Gbit; 4 Gbit; CVD-SiN deposition; Si-H bond; SiCl/sub 4/ source material; SiN; dielectric constant; equivalent thickness; high concentration doping technology; sidewall; single layer nitride capacitor dielectric film; trench-type DRAM; vapor phase; Bonding; Capacitors; Density measurement; Dielectric films; Doping; Random access memory; Semiconductor films; Silicon compounds; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650378

Filename

650378