Title :
Continuous wave operation up to 350 K of Sb-based vertical cavity surface emitting laser near 2.3 /spl mu/m
Author :
Cerutti, L. ; Garnache, A. ; Ouvrard, A. ; Genty, F.
Author_Institution :
Centre d´´Electron. et de Micro-optoelectron. de Montpellier, Univ. Montepellier II, Montpellier, France
Abstract :
We report a CW 350 K operation of a diode-pumped Sb-based surface-emitting-laser at 2.3 /spl mu/m. The structure is made of a 24.5 pairs AlAsSb/GaSb Bragg mirror, 5 type-I InGaAsSb/AlGaAsSb wells. The threshold intensity is <1 kW/cm/sup 2/.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; optical pumping; quantum well lasers; surface emitting lasers; 2.3 mum; 350 K; AlAsSb-GaSb; AlAsSb/GaSb Bragg mirror; InGaAsSb-AlGaAsSb; InGaAsSb/AlGaAsSb wells; Sb-based laser; continuous wave operation; diode-pumped laser; vertical cavity surface emitting laser;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
