Title :
Room-temperature operation of GaInAsSb-AlGaAsSb quantum well lasers in the 2.2 to 3 /spl mu/m wavelength range
Author :
Grau, Markus ; Lin, Chun ; Dier, Oliver ; Amann, Markus-C
Author_Institution :
Walter Schottky Inst., Munchin Tech. Univ., Garching, Germany
Abstract :
GaInAsSb-AlGaAsSb type-I quantum well laser diodes with compressively strained active regions were fabricated. The ridge waveguide lasers show room-temperature continuous wave operation in the wavelength range from 2.2 /spl mu/m to 3 /spl mu/m.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; quantum well lasers; ridge waveguides; waveguide lasers; 2.2 to 3 mum; 20 degC; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb lasers; compressively strained active regions; continuous wave operation; laser diodes; laser fabrication; quantum well lasers; ridge waveguide lasers; room-temperature operation; type-I quantum well laser;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
