DocumentCode
1985099
Title
Room-temperature operation of GaInAsSb-AlGaAsSb quantum well lasers in the 2.2 to 3 /spl mu/m wavelength range
Author
Grau, Markus ; Lin, Chun ; Dier, Oliver ; Amann, Markus-C
Author_Institution
Walter Schottky Inst., Munchin Tech. Univ., Garching, Germany
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
GaInAsSb-AlGaAsSb type-I quantum well laser diodes with compressively strained active regions were fabricated. The ridge waveguide lasers show room-temperature continuous wave operation in the wavelength range from 2.2 /spl mu/m to 3 /spl mu/m.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; quantum well lasers; ridge waveguides; waveguide lasers; 2.2 to 3 mum; 20 degC; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb lasers; compressively strained active regions; continuous wave operation; laser diodes; laser fabrication; quantum well lasers; ridge waveguide lasers; room-temperature operation; type-I quantum well laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361213
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