Title :
CMOS Envelope Tracking amplifier IC design for high-efficiency RF polar transmitters
Author :
Wu, Po-Hsing ; Li, Yan ; Hu, Weibo ; Lopez, J. ; Lie, Donald Y C ; Liang, T.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
Abstract :
CMOS Envelope Tracking (ET) amplifier and a RF SiGe BiCMOS power amplifier (PA) for mobile WiMAX applications is presented. Several versions of the ET amplifiers are designed and their power consumption and bandwidth considerations are discussed. Consequently, the entire polar TX system performances and design trade-offs are presented and compared against different ET amplifiers design. The IC occupies a total area of 1×1.4 mm2 and is being fabricated in a TSMC 0.35μm SiGe BiCMOS process. RF/Analog/Digital system co-simulation indicates that the overall ET-based polar TX system exhibits 30% Power-Added-Efficiency (PAE) and 4.6% Error Vector Magnitude (EVM) at 19dBm PA output power and passes the stringent output spectral mask for a 10 MHz mobile WiMAX 64QAM signal with -10dB Peak-to-Average-Power Ratio (PAR).
Keywords :
BiCMOS integrated circuits; WiMax; amplifiers; integrated circuit design; mobile communication; power consumption; CMOS envelope tracking amplifier IC design; ET amplifiers design; RF SiGe BiCMOS power amplifier; bandwidth considerations; design trade-off; error vector magnitude; high-efficiency RF polar transmitters; mobile WiMAX application; polar TX system performance; power consumption; power-added-efficiency; Bandwidth; CMOS integrated circuits; Mobile communication; Power amplifiers; Radio frequency; Silicon germanium; WiMAX;
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
DOI :
10.1109/ISCAS.2011.5937535
