DocumentCode :
1985518
Title :
OMCVD Growth of lnP, lnGaAs, and lnGaAsP on [110] lnP Substrates
Author :
Bhat, R. ; Koza, M.A. ; Hwang, D.M. ; Brasil, M.J.S.P. ; Nahory, R.E. ; Oe, K.
Author_Institution :
Bellcore, Red Bank, NJ
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
260
Lastpage :
261
Keywords :
Anisotropic magnetoresistance; Epitaxial layers; Gallium arsenide; Geometrical optics; Indium phosphide; Optical sensors; Optical superlattices; Substrates; Surface morphology; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665047
Filename :
665047
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1985518
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