A regulated 3.1–10.6 GHz linear dual-tuning differential ring oscillator for UWB applications

Author

Lu, Li ; Li, Changzhi ; Lin, Jenshan

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA

fYear

2011

fDate

15-18 May 2011

Firstpage

225

Lastpage

228

Abstract

A regulated linear dual-tuning differential ring oscillator has been designed and fabricated in UMC 0.13 μm CMOS process for ultra wide band (UWB) applications. The integrated voltage regulator has a robust performance with high power supply rejection ratio to improve phase noise performance at the presence of power supply ripple. The proposed dual-tuning technique enables a wide tuning range covering the entire UWB spectrum and a fast-tuning capability in the fine-tuning range. Measurement results demonstrate that the proposed oscillator has a large tuning range, high tuning linearity and acceptable phase noise, which is attractive for various UWB applications.

Keywords

CMOS analogue integrated circuits; integrated circuit design; microwave oscillators; phase noise; ultra wideband technology; voltage regulators; UMC CMOS process; UWB application; frequency 3.1 GHz to 10.6 GHz; high power supply rejection ratio; integrated voltage regulator; phase noise performance; power supply ripple; regulated linear dual-tuning differential ring oscillator; ultrawide band application; Delay; Power supplies; Regulators; Ring oscillators; Tuning; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Conference_Location

Rio de Janeiro

ISSN

0271-4302

Print_ISBN

978-1-4244-9473-6

Electronic_ISBN

0271-4302

Type

conf

DOI

10.1109/ISCAS.2011.5937542

Filename

5937542