DocumentCode :
1985624
Title :
Debye temperature of ternary chalcopyrite semiconductors
Author :
Kumar, Vipin ; Shrivastava, A.K.
Author_Institution :
Dept. of Electron. & Instrum., Indian Sch. of Mines Univ., Dhanbad, India
fYear :
2009
fDate :
22-24 Dec. 2009
Firstpage :
560
Lastpage :
563
Abstract :
Debye temperature (??D) of AIBIIIC2 VI and AIIBIVC2 V chalcopyrite semiconductors have been calculated using plasma frequency formalism. Six simple relations have been proposed to calculate the values of ??D. Two are based on plasmon energy data and one each on molecular weight (W), melting temperature (Tm), ionicity (fi) and energy gap (Eg). The calculated values of ??D from all equations are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.
Keywords :
Debye temperature; energy gap; melting point; plasmons; ternary semiconductors; Debye Temperature; energy gap; ionicity; melting temperature; plasma frequency formalism; plasmon energy; ternary chalcopyrite semiconductors; Differential equations; Lattices; Light emitting diodes; Nonlinear optics; Photovoltaic cells; Plasma temperature; Plasmons; Solids; Stimulated emission; Temperature measurement; Debye temperature; Ternary Chalcopyrite Semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
Type :
conf
DOI :
10.1109/ELECTRO.2009.5441041
Filename :
5441041
Link To Document :
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