DocumentCode :
1985757
Title :
Secondary Electron flash-a high performance, low power flash technology for 0.35 /spl mu/m and below
Author :
Bude, J.D. ; Mastrapasqua, M. ; Pinto, M.R. ; Gregor, R.W. ; Kelley, P.J. ; Kohler, R.A. ; Leung, C.W. ; Ma, Y. ; McPartland, R.J. ; Roy, P.K. ; Singh, R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1997
fDate :
10-10 Dec. 1997
Firstpage :
279
Lastpage :
282
Abstract :
This work presents recent results on Secondary Electron flash memory, and contrasts this approach to standard for scaled, low power mass storage applications.
Keywords :
EPROM; integrated memory circuits; 0.35 micron; CHISEL; scaled low power mass storage technology; secondary electron flash memory; Channel hot electron injection; Charge pumps; Digital cameras; Flash memory; Flash memory cells; Low voltage; Power generation; Power supplies; Stress; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4100-7
Type :
conf
DOI :
10.1109/IEDM.1997.650381
Filename :
650381
Link To Document :
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