Title :
Intrinsic and Extrinsic Impurity Incorporation in Very High Purity GaAs Grown From Trimethylgallium and Arsine
Author :
Hanna, M.C. ; Lu, Z.H. ; Oh, E.G. ; Mao, E. ; Majerfeld, A.
Author_Institution :
University of Colorado Department of Electrical and Computer Engineering
Keywords :
Density measurement; Electron mobility; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Pollution measurement; Purification; Temperature dependence; Zinc;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.665048
