DocumentCode
1985771
Title
Intrinsic and Extrinsic Impurity Incorporation in Very High Purity GaAs Grown From Trimethylgallium and Arsine
Author
Hanna, M.C. ; Lu, Z.H. ; Oh, E.G. ; Mao, E. ; Majerfeld, A.
Author_Institution
University of Colorado Department of Electrical and Computer Engineering
fYear
1992
fDate
8-11 Jun 1992
Firstpage
262
Lastpage
262
Keywords
Density measurement; Electron mobility; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Pollution measurement; Purification; Temperature dependence; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.665048
Filename
665048
Link To Document