• DocumentCode
    1985904
  • Title

    Enhancement of specific capacitance of polyaniline by secondary metal ion doping

  • Author

    Singh, Arun Kumar ; Gupta, Bhavana ; Prakash, Rajiv

  • Author_Institution
    Sch. of Mater. Sci. & Technol., Banaras Hindu Univ., Varanasi, India
  • fYear
    2009
  • fDate
    22-24 Dec. 2009
  • Firstpage
    522
  • Lastpage
    524
  • Abstract
    In this paper we are reporting secondary metal ion doped polyaniline is chemically synthesized and used for the construction of a redox supercapacitor. The chloride doped polyaniline is chemically synthesized and secondary doping with iron metal cation is studied using 0.5 M concentration of ferric chloride as oxidizing agent. Iron ions doped polyaniline is coated over the indium tin oxide (ITO) coated glass plates using solution casting technique and films are characterized using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in propylene carbonate (PC) electrolytes. The secondary ions doped polyaniline shows a significant improvement in the charge storage properties.
  • Keywords
    capacitance; casting; coatings; conducting polymers; doping; electrochemical impedance spectroscopy; iron; polymer electrolytes; supercapacitors; voltammetry (chemical analysis); ITO-SiO2; SiO2; charge storage properties; chemical synthesis; chloride doped polyaniline; cyclic voltammetry; electrochemical impedance spectroscopy; ferric chloride; indium tin oxide coated glass plates; iron metal cation; propylene carbonate electrolytes; redox supercapacitor; secondary metal ion doping; solution casting; specific capacitance; Capacitance; Capacitors; Conducting materials; Doping; Indium tin oxide; Iron; Materials science and technology; Photonic integrated circuits; Polymers; Supercapacitors; Conducting polymer; Polyaniline; Supercapacitor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
  • Conference_Location
    Varanasi
  • Print_ISBN
    978-1-4244-4846-3
  • Type

    conf

  • DOI
    10.1109/ELECTRO.2009.5441051
  • Filename
    5441051