• DocumentCode
    1985959
  • Title

    900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm

  • Author

    Linder, N. ; Butendeich, R. ; Karnutsch, C. ; Schmid, W. ; Tautz, S. ; Streubel, K. ; Rurländer, S. ; Schweizer, H. ; Scholz, F.

  • Author_Institution
    OSRAM Opto Semicond., Regensburg, Germany
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    900 mW of continuous-wave power has been achieved in AlInGaP tapered lasers at 640 nm. Good beam quality and high device efficiency are obtained. Superluminescent diodes show strongly increased spectral width while retaining the good beam properties.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor lasers; spectral line breadth; superluminescent diodes; 640 nm; 900 mW; AlInGaP; beam quality; continuous wave operation; high device efficiency; increased spectral width; superluminescent diodes; tapered lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1985959