Title :
Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes
Author :
Wang, Y.S. ; Chen, N.C. ; Chen, J.F.
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.
Keywords :
III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; photoluminescence; wide band gap semiconductors; InGaN-GaN; diffusion controlled effect; diffusion controlled kinetic; light emitting diodes; luminescent efficiency; recombination process; temperature dependent photoluminescence; time resolved photoluminescence; Gallium nitride; Kinetic theory; Light emitting diodes; Photoluminescence; Radiative recombination; Temperature dependence;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6193747
