DocumentCode
1986031
Title
Preparation and optical characterization of ZnO thin film for optoelectronic applications
Author
Elilarassi, R. ; Chandrasekaran, Geetha
Author_Institution
Dept. of Phys., Pondicherry Univ., Puducherry, India
fYear
2009
fDate
22-24 Dec. 2009
Firstpage
497
Lastpage
499
Abstract
In the present work, ZnO film has been successfully grown on soda-lime glass substrate using a modified Liquid flow deposition technique (LFD). Structural and optical properties of the samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Analysis using X-Rays (EDAX), Fourier Transform Infrared Spectroscopy (FTIR), UV-Visible and Photoluminescence (PL). Structural analysis using XRD revealed the formation of polycrystalline hexagonal wurtzite structure of ZnO for the film annealed at 300??C. SEM study revealed the smoothness and uniformity of the film with hexagonal nanoparticles of ZnO. FTIR analysis confirms the formation of ZnO in the film. The optical band-gap energy of the obtained film is (3.36 eV) close to that of bulk value. From PL study, blue and red emission peaks were observed for the ZnO film.
Keywords
Fourier transform spectra; II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; annealing; infrared spectra; liquid phase deposition; nanoparticles; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; EDAX; FTIR; Fourier transform infrared spectroscopy; Na2O-SiO2-CaO-Jk; SEM; UV-Visible spectra; X-ray diffraction; XRD; ZnO; annealing; blue emission peaks; energy dispersive X-rays analysis; hexagonal nanoparticles; modified liquid flow deposition technique; optical band-gap energy; optical characterization; optoelectronic applications; photoluminescence; polycrystalline hexagonal wurtzite structure; red emission peaks; scanning electron microscopy; soda-lime glass substrate; structural analysis; temperature 300 degC; thin films; Electron optics; Fluid flow; Glass; Optical films; Optical microscopy; Scanning electron microscopy; Substrates; X-ray diffraction; X-ray scattering; Zinc oxide; Morphology; Optical Band gap; Photoluminescence; XRD; Zinc oxide thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location
Varanasi
Print_ISBN
978-1-4244-4846-3
Type
conf
DOI
10.1109/ELECTRO.2009.5441056
Filename
5441056
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