DocumentCode
1986071
Title
Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS Technologies
Author
Kinget, Peter ; Chatterjee, Shouri ; Tsividis, Yannis
Author_Institution
Department of Electrical Engineering, Columbia University, New York, NY 10027 U.S.A.
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
9
Lastpage
14
Abstract
This paper reviews the challenges and opportunities for ultra-low voltage analog integrated circuit design. The continuing scaling of CMOS technology feature sizes forces a proportional reduction of the supply voltage. The ultra-low supply voltages, down to 0.5 V, projected for the nanoscale CMOS technologies requires drastic changes in the basic circuit topologies used in analog integrated circuits. We explore the combined use of the gate and body terminal of the MOS transistor for signal input or bias control. We illustrate several true-low voltage OTA design and biasing techniques in a fully integrated 0.5 V varactor-C active filter implemented in a standard 0.18 μm CMOS technology.
Keywords
Active filters; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Integrated circuit technology; MOS devices; MOSFETs; Nanoscale devices; Radio frequency; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635192
Filename
1635192
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