DocumentCode :
1986071
Title :
Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS Technologies
Author :
Kinget, Peter ; Chatterjee, Shouri ; Tsividis, Yannis
Author_Institution :
Department of Electrical Engineering, Columbia University, New York, NY 10027 U.S.A.
fYear :
2005
fDate :
19-21 Dec. 2005
Firstpage :
9
Lastpage :
14
Abstract :
This paper reviews the challenges and opportunities for ultra-low voltage analog integrated circuit design. The continuing scaling of CMOS technology feature sizes forces a proportional reduction of the supply voltage. The ultra-low supply voltages, down to 0.5 V, projected for the nanoscale CMOS technologies requires drastic changes in the basic circuit topologies used in analog integrated circuits. We explore the combined use of the gate and body terminal of the MOS transistor for signal input or bias control. We illustrate several true-low voltage OTA design and biasing techniques in a fully integrated 0.5 V varactor-C active filter implemented in a standard 0.18 μm CMOS technology.
Keywords :
Active filters; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Integrated circuit technology; MOS devices; MOSFETs; Nanoscale devices; Radio frequency; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
Type :
conf
DOI :
10.1109/EDSSC.2005.1635192
Filename :
1635192
Link To Document :
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