DocumentCode :
1986097
Title :
Bismuth Sulfide nanoparticle doped optical current sensors with enhanced Verdet constant
Author :
Kumar, Ganapathy ; Mahajan, Satish M. ; Panmand, Rajendra P. ; Kale, Bharat B. ; Gosavi, S.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Technol. Univ., Cookeville, TN, USA
fYear :
2009
fDate :
22-24 Dec. 2009
Firstpage :
491
Lastpage :
494
Abstract :
Magneto-optic current transformers (MOCT) are commonly used for measurement and protection purpose in high voltage power systems. Higher Verdet constant is desirable for increased resolution of the current sensor. In this work, an enhancement in the Verdet constant was demonstrated for bulk silica glass doped with Bismuth Sulfide quantum dots at very low AC magnetic fields. The measured values showed an enhancement of up to 3.6 times that of the original undoped blank glass host. The glasses were optically characterized using UV-Vis spectroscopy and then tested for magneto-optic sensitivity. The current sensing characteristics were defined with respect to the applied magnetic field and the rotation angle. The Verdet constant was determined by using a lock-in method that included a change in relative intensity at the detector.
Keywords :
Faraday effect; bismuth compounds; current transformers; magnetic field effects; magneto-optical devices; nanoparticles; power system protection; quantum dots; ultraviolet spectra; AC magnetic fields; UV-Vis spectroscopy; bismuth sulfide nanoparticle doped optical current sensors; bismuth sulfide quantum dots; bulk silica glass; high voltage power system protection; magneto-optic current transformers; magneto-optic sensitivity; verdet constant; Bismuth; Current measurement; Current transformers; Glass; Magnetic field measurement; Magnetic sensors; Optical sensors; Power measurement; Power system measurements; Power system protection; Faraday rotation; UV-Vis spectroscopy; Verdet constant; quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
Type :
conf
DOI :
10.1109/ELECTRO.2009.5441058
Filename :
5441058
Link To Document :
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