Title :
Gate-controlled rectifying behavior in C70@SWNTs networks
Author :
Guo, Ao ; Fu, Yunyi ; Liu, Jia ; Guan, Lunhui ; Shi, Zujin ; Gu, Zhennan ; Huang, Ru ; Zhang, Xing
Author_Institution :
Department of Microelectronics, Peking University, Beijing, China
Abstract :
We observed gate-controlled current rectification in C70@SWNTs networks. The electrical transport characterization can be fitted well with the conventional Schottky diode model. The origin of the rectifying behavior in peapod networks device is also qualitatively discussed. This paper also demonstrates a strategy for diode fabrication based on peapod networks and selective electrical breakdown procedure.
Keywords :
Electric breakdown; Electrodes; FETs; Fabrication; Intelligent networks; Nanoelectronics; Photonic band gap; Schottky diodes; Semiconductivity; Semiconductor diodes;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635196
