Radar Pulsed Burn-Out of Low Noise GaAs Mesfets

This paper presents some new low noise GaAs FET radar burn-out results. The spread in burn-out energies is very large, as in earlier reported work. A simple model of the GaAs FET gate shows qualitative agreement with some aspects of observed failures. Interpulse degradation of gain and noise figure have been measured and a new circuit technique has been developed which significantly reduces the degradation.