Title :
Deposition by LP-MOVPE in the Ga-In-As-P System on Differently Oriented Substrates
Author :
Elsner, B. ; Westphalen, R. ; Heime, K. ; Balk, P.
Author_Institution :
Institut fur Halbleitertechnik, Germany
Keywords :
Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Lattices; Pressure effects; Temperature dependence;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.665050
