Title :
Calculating the noise equivalent bandwidth of a Ge-Based schottky photodetector at 1.55 µm wavelength
Author :
Dutta, Himadri Sekhar ; Das, N.R.
Author_Institution :
A.K.Choudhury Sch. of Inf. Technol., Univ. of Calcutta, Kolkata, India
Abstract :
In this paper, the noise equivalent bandwidth (NEB) of a Ge-on-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays a significant role on the noise equivalent bandwidth of the photodetector at low-bias.
Keywords :
Ge-Si alloys; cavity resonators; photodetectors; random noise; Ge-based Schottky photodetector; Ge-on-Si resonant cavity; Si-Ge; Si-Ge heterointerface; noise equivalent bandwidth; wavelength 1.55 micron; 1f noise; Bandwidth; Charge carrier processes; Detectors; Electron traps; Optical films; Optical noise; Photodetectors; Resonance; Semiconductor device noise; 3-dB bandwidth; Frequency response; Noise Equivalent Bandwidth; Resonant Cavity Encapsulated; Schottky Photodetector;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441063
